| 画像 | 、 | メーカー | 説明 | 単価 | 株式 | |
|---|---|---|---|---|---|---|
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UR4KB80 | Taiwan Semiconductor | Bridge Rectifiers 4A,800V,glass Pass SIL bridge | $0.26 | 57 | |
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UR4KB60 | Taiwan Semiconductor | Bridge Rectifiers 4A,600V,glass Pass SIL bridge | $0.26 | 66 | |
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UR4KB100 | Taiwan Semiconductor | Bridge Rectifiers 4A,1000V,glass Pass SIL bridge | $0.38 | 97 | |
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UR4KB100-B C2 | Taiwan Semiconductor | Bridge Rectifiers 4A, 1000V, SIL bridge | $0.69 | 95 | |
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UR4KB80-B C2 | Taiwan Semiconductor | Bridge Rectifiers 4A, 800V, SIL bridge | $0.69 | 81 | |
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UR2KB100 C2G | Taiwan Semiconductor | Bridge Rectifiers 2A 1000V Standard Bridge Rectif | $0.72 | 80 | |
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UR2KB80 C2G | Taiwan Semiconductor | Bridge Rectifiers 2A 800V Standard Bridge Rectif | $0.72 | 55 | |
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MA44781 | MACOM | PIN Diodes Junc. Cap. 0.5pF Non-Magnetic | $38.5 | 62 | |
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LXES1UTBB1-157 | Murata Electronics | TVS Diodes / ESD Suppressors Si 1 Channel ESD Device | $0.11 | 96 | |
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MT46H64M16LFBF-5 ITB TR | Micron | DRAM MOBILE DDR 1G 64MX16 FBGA | $7.6 | 1609 | |
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MT46H64M16LFBF-5 AATB TR | Micron | DRAM MOBILE DDR 1G 64MX16 FBGA | $11.65 | 1109 | |
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MT46H32M16LFBF-5 ITC | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $5.4 | 3273 | |
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MT46H32M16LFBF-6 ATC | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $8.73 | 80 | |
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MT46H32M16LFBF-6 AATC | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $8.73 | 59 | |
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MT46H64M16LFBF-5 AATB | Micron | DRAM MOBILE DDR 1G 64MX16 FBGA | $11.65 | 50 | |
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MT46H64M16LFBF-5 AITB TR | Micron | DRAM MOBILE DDR 1G 64MX16 FBGA | $9.89 | 1414 | |
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MT46H32M16LFBF-6 ATC TR | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $8.73 | 1781 | |
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MT46H32M16LFBF-6 AATC TR | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $8.73 | 1747 | |
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MT46H64M16LFBF-5 ITB | Micron | DRAM MOBILE DDR 1G 64MX16 FBGA | $7.6 | 68 | |
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MT46H32M16LFBF-5 AITC TR | Micron | DRAM MOBILE DDR 512M 32MX16 FBGA | $8.26 | 2000 |